Abstract
The effect of hydrogen chloride (HCl) gas on homo- and heteroepitaxies of ZnSe was investigated. As-grown (100)ZnSe/(100)GaAs and chemicaliy etched (100)GaAs were used as substrates. Thermal etching of the substrate in HCl gas flow was carried out for 5 min at various temperatures (200-400°C) prior to the film growth at 350°C. Homo- and heteroepitaxies occurred after thermal etching above 250°C and 200°C, respectively. In the case of the heteroepitaxial film, a very smooth surface was obtained and a streaky reflection high energy electron diffraction (RHEED) pattern was observed. A sharp Ix line was predominant in the photoluminescence (PL) spectrum.
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