Abstract
Epitaxial growth of Inx Ga1-x N on a GaN buffer layer/(0001) sapphire substrate by halide vapor phase epitaxy is reported for the first time. It is shown that the growth rate of the InGaN alloy at a constant input mole ratio of group III sources decreases with increasing growth temperature from 700 to 825° C. The solid composition of epitaxial layers becomes more GaN-rich with increasing growth temperature. At all temperatures, preferential deposition of the GaN component is observed. The preferential deposition is discussed briefly from a thermodynamical point of view.
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