Abstract
The growth kinetics of InxGa1−xN epitaxial layer on GaN-buffer/sapphire (0001) substrate and the vapor–solid distribution relationship of the chloride source system are investigated. The growth rate decreases with increasing growth temperature. The solid composition of epitaxial layers becomes more GaN-rich with the increasing growth temperature and is very sensitive to the H2 mole reaction in the carrier gas. In the vapor–solid distribution relationship, the preferential incorporation of the GaN component is observed. The indium droplets are not observed on the surface of InxGa1−xN films in the entire composition range. Without In droplets formation, the In-rich InxGa1−xN alloys as high as 0.8 of In content are obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
