Abstract
We have investigated vapor phase deposition of lead-free all-inorganic perovskite CsSn1−x Zn x Br3 thin films (x = 0, 0.01, 0.02, 0.04, 0.10, 0.20 and 1.00) by co-evaporation of CsBr, SnBr2, and ZnBr2. We found that zinc ions can be incorporated into the perovskite lattice by substitution of up to 4% tin ions. Incorporation of zinc ions narrowed the band gap and suppressed oxidation of Sn2+. The deposited CsSn1−x Zn x Br3 polycrystalline thin films were of better quality compared to pure CsSnBr3, showing improved morphologies with fewer pinholes and larger grains. These properties of CsSn1−x Zn x Br3 will lead to the realization of efficient and stable lead-free perovskite solar cells.
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