Abstract
This work demonstrates the vapor phase deposition of copper films with a volatile Cu(I) β-diketiminate precursor. X-ray photoelectron spectroscopy (XPS) depth profiles of the deposited films show only background levels of carbon and oxygen. Film thickness depends on the length of precursor pulse, but the surface roughness does not, a result that suggests a uniform deposition. XPS data for the chemisorbed copper precursor show that the copper was in both the metallic and + 1 oxidation states. Chemisorption of the Cu(I) precursor deposited a Cu(I) species. However, disproportionation of some of the chemisorbed Cu(I) precursor generated Cu(0) and a volatile Cu(II) complex, which was removed from the surface. These results are characteristic of a pulsed chemical vapor deposition.
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