Vapor–liquid–solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with a Pt–Si alloy flux and X-ray topography analysis of their dislocation propagation behaviors

Abstract

The CVD–VLS process for 4H-SiC films with a Pt–Si alloy flux achieved their low carrier densities of ∼1015 cm−3, demonstrating a remarkable etch back effect and a possible conversion of TEDs and TSDs in the substrate to BPDs in the films.