Abstract
Abstract The concept of a new epitaxial growth technique called Vapor Levitation Epitaxy (VLE) is described. With this technique the substrate is floated above the growth apparatus by the growht vapors emerging from a chamber through a porous disc. Growth occurs on the underside of the substrate. Movement of the substrate from one growth chamber to an adjacent chamber provides very abrupt doping and compositional interfaces. The substrate is moved to and from the growth chambers along a horizontal levitation track on a cushion of gas. GaAs, InP and InGaAs layers, as well as quantum-well heterostructures, have been grown with a VLE system.
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