Abstract
The paper reviews the so-called Modified-PVT (M-PVT) technique which combines the state of the art PVT technique for SiC crystal growth with physical and chemical vapor deposition (PVD and CVD) for fine tuning of growth parameters and improved doping. Using this technique, currently the highest aluminum doping levels and lowest resistivity values in p-type bulk SiC were achieved that for the first time meet device fabrication needs. The paper will address fundamentals of the Modified-PVT technique including a comparison of experimental results with numerical modeling of the gas flow. As additional gas feeding helium, helium–aluminum vapor for p-type doping, phosphine for n-type doping and propane for fine tuning of the C/Si gas phase composition will be discussed. So far, the M-PVT concept, i.e. mixture of conventional PVT and fine tuning by PVD/CVD, enables the most flexible doping of SiC single crystals.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
