Abstract
Epitaxial InAsxP1-x layers have been grown on GaAs, InAs and InP substrates using the InAs–AsCl3–InP–PCl3–H2, InAs–HCl–InP–HCl–H2 and In–AsCl3–In–PCl3–H2 vapor phase systems. It has been clarified that in these systems the grown layer composition x is dependent only on the gas composition (ratio of As/(As+P) in gas phase) and is independent of the other growth parameters, growth temperature, reactant gas concentration, hydrogen flow rate, substrate material, crystallographic orientation of substrate and growth system. The equilibrium constants of the growth reactions for InAs and InP have been obtained experimentally. A thermodynamical calculation for the vapor growth of InAsxP1-x has been carried out. Good agreements between experimental results and calculated results have been obtained. An interaction parameter of 3000 cal/mole for InAs–InP alloy is suggested.
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