Abstract
The procedure for growing HgI 2 crystals from the vapor phase using the temperature oscillation method (TOM) is described for both periodic oscillation of the source temperature (POST) and periodical oscillation of the crystal temperature (POCT) methods. The POST method is applied in both a horizontal and vertical furnace and the POCT method only to a vertical furnace. The thermodynamic principles of the TOM are reviewed and compared with the experimental results. Large single crystals of about 100 g each can be grown with either POST or POCT methods, provided that an additional radial temperature gradient is superimposed on the existing and oscillating axial gradient. The 137Cs gamma-ray spectrum measured with a HgI 2 crystal at room temperature is also shown.
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