Abstract
Vapor growth of GaAs, GaP, InAs and InP has been carried out in a hydrogen-inert gas mixed carrier system. The growth rate dependences on inert gas partial pressure, subsrtee temperature and reactant (AsCl3 or PCl3) mole fraction have been examined. The growth rate of GaAs decreases with increasing inert gas partial pressure in the whole substrate temperature range; not only in the region where the growth process operates under thermodynamic control, but also in the region of kinetic control. In the thermodynamic control region, the growth rate decrease depends on the kind of inert gas, but this is not true in the kinetic control region. The growth rate decrease in the thermodynamic control region can be explained by an equilibrium calculation based on a single chemical reaction process and the diffusion of reactants in the mixed carrier gas. In the kinetic control region, the hydrogen partial pressure influences the growth rate through the p1.0H2 relation. A model for the growth kinetics, including thehydrogen gas effect, is presented. The inert gas effect on GaP and InAs growth is the same as that on GaAs growth. For InP growth, however, inert gas not only reduces the growth rate, but also causes the source reaction to go out of equilibrium.
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