Vapor deposition rate modifies anisotropic glassy structure of an anthracene-based organic semiconductor.

Abstract

We control the anisotropic molecular packing of vapor-deposited glasses of ABH113, a deuterated anthracene derivative with promise for future organic light emitting diode materials, by changing the deposition rate and substrate temperature at which they are prepared. We find that at substrate temperatures from 0.65Tg to 0.92Tg, the deposition rate significantly modifies the orientational order in the vapor-deposited glasses as characterized by x-ray scattering and birefringence. Both measures of anisotropic order can be described by a single deposition rate-substrate temperature superposition (RTS). This supports the applicability of the surface equilibration mechanism and generalizes the RTS principle from previous model systems with liquid crystalline order to non-mesogenic organic semiconductors. We find that vapor-deposited glasses of ABH113 have significantly enhanced density and thermal stability compared to their counterparts prepared by liquid-cooling. For organic semiconductors, the results of this study provide an efficient guide for using the deposition rate to prepare stable glasses with controlled molecular packing.