Abstract
Thin film deposits of Cu, Ni, and Rh were obtained by hydrogen reduction of , , , and from the gas phase (tfa = trifluoroacetylacetonate anion; hfa = hexafluoroacetylacetonate anion). The chelates are well suited for gas plating purposes by virtue of their high volatility and ease of reduction by hydrogen. The deposition process can be conducted at atmospheric pressure and at temperatures as low as 250°C. The process is potentially cyclic, free chelating agent being regenerated by the reduction reaction.
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