Abstract
AbstractAg2S as a narrow band gap semiconductor is appropriate for photoimaging in the infrared (IR) region. Co-evaporation of Ag and S from two separate sources was used for preparing of thin Ag2S films with different Ag/S ratio. Gelatine subbed glass plates were used as substrates. The structure of the films obtained was examined by transmission electron microscopy and electron diffraction. The effects of chemical composition, film thickness and processing conditions on the photographic parameters were studied.It is shown that after appropriate processing thin Ag2S films with stoichiometric composition can. be successfully used as high resolution (1600 lines/mm) photographic materials in the IR region.
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