Abstract
Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (ΔE=0.08 eV, σ=3.2×10-18 cm2), VB (ΔE=0.28 eV, σ=2.6×10-14 cm2) and VC (ΔE=0.24 eV, σ=8.4×10-18 cm2). These vanadium-related levels do not have appreciable broadening of the emission rate spectrum.
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