Abstract
Multilayers’ absorption DMDM structure of SiO2/TiN x /SiO2/VO x structure for 8-14 infrared wavelengths is proposed and simulated. Between mid-infrared 8 μm and 14 μm wavelengths, infrared detector with this structure and thermal sensitive VO x of −7%/K TCR, which exhibits high infrared absorption about average 83%, has been fabricated and tested successfully.
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