Abstract
Vanadium (V) doped Cd0.9Mn0.1Te (CdMnTe:V) crystals were grown with a nominal Vanadium concentration of 1×1017atoms/cm3 from excess 10at% Te solution that was carried out by the vertical Bridgman method with accelerated crucible rotation technique(ACRT). The as-grown crystals display a high resistance characteristic of 4.123×101°Ω·cm in the wafer cutting from the middle part of the ingot. The infrared microscopy images show that the planar density of Te inclusions/precipitates in the crystals is between 1.4×103 to 6×105cm−2. The measured highest IR transmission in the middle part of the ingot of 63% is near the theoretical limit of 65%. Moreover, the PL spectra show a sharp (D°, X) peak, a flat Dcomplex peak and a low DAP peak. The (D°, X) peak has a FWHM of 4.36meV, indicating a high quality of crystallization, while a flat Dcomplex peak means very low dislocations and defects relative to the vacancies of Cd in the middle part of this ingot. The low DAP peak with a relative intensity of IDAP/I(D°, X) of 0.045 demonstrates low impurity concentration in this crystal.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
