Abstract
We introduce a set of boundary conditions for electron envelope functions at GaAs/AlAs heterointerfaces so as to take into account \ensuremath{\Gamma}-${\mathit{X}}_{\mathit{z}}$ and ${\mathit{X}}_{\mathit{x}\mathrm{\ensuremath{-}}}$${\mathit{X}}_{\mathit{y}}$ valley mixings in the effective-mass method. The proposed conditions enable one to obtain the dependence of the mixing effect upon the parity of monolayer numbers in AlAs and GaAs layers, in agreement with the empirical model calculations. The tunneling probability across a two-interface structure GaAs(AlAs${)}_{\mathit{M}}$GaAs(001) is calculated as a function of the \ensuremath{\Gamma}-electron energy. The electron transfer is shown to depend essentially on the parity of M. An analytical solution is obtained for the dispersion of mixed ${\mathit{X}}_{\mathit{x}\mathit{y}}$ minibands. Direct optical transitions are allowed between these minibands in the in-plane light polarization. The corresponding far-infrared absorption coefficient is calculated and estimated.
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