Abstract
The authors discuss a bipolar-unipolar transition in a spin diode, which would be interesting for logic or memory devices in spintronics. Generating the requisite on-off states for opposite spins could be difficult, though. This study proposes coupling the electronic valley degrees of freedom in monolayer silicene, germanene, or stanene to the spin degrees in a ferromagnet/antiferromagnet junction, such that the transition is valley-mediated but electrically switched. This approach would provide a feasible means of controlling spin current more comprehensively, and thus is expected to have an impact on engineering spin circuits for reprogrammable logic and nonvolatile memory.
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