Abstract
Spin and valley dependent transport properties through a two-dimensional silicene junction irradiated by a monochromatic circularly polarized light are investigated within the framework of Floquet scattering matrix. The light irradiation generates gaps in dispersion and results in selective suppression in ballistic conductance. Spin and valley polarized transmission can be achieved by tuning the driving strength of irradiation. Spin and valley polarization of conductance exhibits specific symmetry with respect to site potential, which is conveniently tuned by an external field. The controllable spin and valley polarization obtained here suggests the silicene junction ideal for future spintronics and valleytronics applications.
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