Abstract
The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H–SiC, has lower growth cost and can be grown heteroepitaxially in large area silicon (Si) wafers which makes it of special interest. This in conjunction with the recently reported growth of improved quality 3C–SiC, make the development of devices an imminent objective. However, the readiness of models that accurately predict the material characteristics, properties and performance is an imperative requirement for attaining the design and optimization of functional devices. The purpose of this study is to provide and validate a comprehensive set of models alongside with their parameters for bulk 3C–SiC. The validation process revealed that the proposed models are in a very good agreement to experimental data and confidence ranges were identified. This is the first piece of work achieving that for 3C–SiC. Considerably, it constitutes the necessary step for finite element method simulations and technology computer aided design.
Highlights
IntroductionWide bandgap (WBG) semiconductors feature a wider bandgap (> 2eV) compared to Silicon (Si)
Wide bandgap (WBG) semiconductors feature a wider bandgap (> 2eV) compared to Silicon (Si).They are of increased interest, because Si technology is reaching its performance limitations especially for power electronic systems [1]
These coefficient values are calculated in such a way that for low doping concentration, that is below 1018 cm−3, the band edge displacements of the material will be negligible
Summary
Wide bandgap (WBG) semiconductors feature a wider bandgap (> 2eV) compared to Silicon (Si). Taking into account that the performance is dominated by the material quality, cubic SiC polytype is not yet described as a matured technology and is open to advancements [19]. Simulations would be a major step forward for this polytype This is because TCAD assists power semiconductor device development including the achievement of optimized performance [20] and high reliability [21]. Initial efforts to describe the cubic-polytype of SiC in TCAD tools are present [25] as well with simulations in device level [26][27][28]. The existence of an accurate and valid TCAD material model will be of great value for the research on this polytype on such power devices to be lifted up.
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