Abstract
In this communication, the valence band structure, the momentum matrix elements and the optical gain of the wurtzite strained GaN/AlGaN quantum wells are compared with those of the zinc-blende ones. The 3\sX3 effective mass Hamiltonian in the basis set of |3/2, m) and |1/2, m) for both wurtzite and zinc-blende semiconductors is employed in this study. We also present the momentum matrix elements which can be used for both wurtzite and zinc-blende semiconductors. The optical gain of a wurtzite GaN/AlGaN quantum well is smaller than that of a zinc-blende GaN/AlGaN quantum well because of its larger electron and hole effective masses and its strong TE-polarization on account of the small spin-orbit splitting energy.
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