Abstract
The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were investigated using the theoretical model based on the k·p method. Numerical results show that there is valence subband coupling which can influence the peak emission wavelength and emission intensity for TE and TM polarization components from Al-rich AlGaN/AlN QWs. Especially the valence subband coupling could be strong enough when CH1 is close to HH1 and LH1 subbands to modulate the critical Al content switching dominant emissions from TE to TM polarization. It is believed that the valence subband coupling may give important influence on polarization properties of spontaneous emissions and should be considered in designing high efficiency AlGaN-based ultraviolet (UV) LEDs.
Highlights
AlGaN alloys, especially Al-rich AlGaN alloys are promising semiconductors for the production of light-emitting devices in the spectral range from ultraviolet (UV) to deep-UV
The simulation result demonstrated that there is obvious valence subband coupling at kt = 0 and kt ≠ 0, which can influence the momentum matrix element and spontaneous emission spectrum. This results in TE polarized emission from C-CH1 transitions and TM component from C-HH1 and C-LH1 transitions due to the valence subband coupling
The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were analyzed using the theoretical model based on the k⋅p method
Summary
AlGaN alloys, especially Al-rich AlGaN alloys are promising semiconductors for the production of light-emitting devices in the spectral range from ultraviolet (UV) to deep-UV. This will be beneficial to realize the polarization control or the polarization switch of UV light emissions from AlGaN/AlN QWs. In this work, the influence of valence subband coupling on polarization of spontaneous emissions from Al-rich AlGaN/GaN QWs was analyzed and discussed. The simulation result demonstrated that there is obvious valence subband coupling at kt = 0 and kt ≠ 0, which can influence the momentum matrix element and spontaneous emission spectrum. This results in TE polarized emission from C-CH1 transitions and TM component from C-HH1 and C-LH1 transitions due to the valence subband coupling.
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