Abstract
Abstract X-ray photoelectron spectra in the valence electron region were obtained for gaseous SiH 4 , SiH 3 CH 3 , Si(CH 3 ) 4 , SiH 3 Cl, and SiF 4 . The experimental ionization potentials and relative peak intensities are consistent with extended Huckel theory MO calculations. The data can be rationalized without assuming substantial participation of silicon d orbitals in the bonding of these compounds.
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