Abstract
The effective hole masses of wurtzite GaN are determined experimentally by an all-optical method. Therefore, we measure interband transitions as a function of the degenerate free-electron density and analyze the different many-body contributions arising from the Burstein–Moss effect and band-gap renormalization. When the known anisotropic effective electron mass is taken into account, the shape of the valence band can be reconstructed. Here, nonpolar GaN thin films doped with germanium or silicon at 9 × 1018 ≤ n ≤ 1.5 × 1020 cm−3 are investigated. Effective hole masses of , for the A valence band and for the B valence band are found (for 0.3 nm−1 < |k| < 2 nm−1) .
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
