Abstract
Thin films of MoS2 were synthesied via electrodeposition. The films were characterized by X-Ray Diffraction, Raman spectroscopy, Field Emission Scanning Electron Microscopy, Optical Spectroscopy and X-ray Photoelectron Spectroscopy. The valence band maximum of the films were calculated from the XPS data. With the XPS and optical spectroscopy data, the band diagrams were calculated. The band alignment with Indium Tin Oxide (ITO) transparent conductive oxide was also deduced from the XPS data. The I-V characteristics of the ITO/MoS2 heterojunction was also studied.
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