Abstract
We have calculated the valence band structures in CdxZn1-xS/ZnS quantum wells (QWs). The coupling effect appears between the heavy-hole and light-hole subbands. The variation of the slope of E–k|| dispersion curves reflects the variation of the heavy- and light-hole masses in the CdxZn1-xS wells. The optical gain formation requires a higher carrier concentration than that of the GaAs-based QWs.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
