Abstract
Hole structure of a GaAs–Al0.3Ga0.7Asp-type multiple quantum well (MQW) subjected to an electric field parallel to the growth axis is studied using the envelope-function approximation and taking into account the valence subband mixing. The system considered in this work consists of five GaAs wells and six thick Al0.3Ga0.7As barriers. The valence subband structure and the optical-absorption coefficient are calculated as functions of the electric-field strength for various doping levels. The subband structure is shown to be nonparabolic and anisotropic in the plane of the layers with a four-fold symmetry. The spin splitting due to the lack of specular symmetry of quantum wells is a growing function of the electric-field strength. The calculated optical absorption is in good agreement with the experimental spectra.
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