Abstract
A novel technique, for obtaining the valence band state densities (VBSD's) of tetrahedrally coordinated amorphous semiconductors from normal incidence reflectance data, is applied to Si and Ge and GaP, GaAs and GaSb. The VBSD's of Si and Ge are similar to other published results, obtained by conventional techniques, and cannot be described by broadened crystalline VBSD's. On the other hand, the VBSD's of the 3–5's contain many of the crystalline features. The relation of these results to the structure of the amorphous phase is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
