Abstract
Both the epitaxial-strain and atomic-ordering effects in In0.54Ga0.46P1−yNy∕GaAs(y=0%−2.0%) heterostructures are characterized by high-resolution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard’s law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS.
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