Abstract
The valence-band splitting in thin ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{N}}_{x} (0.011<~x<~0.033)$ epilayers strained coherently by the GaAs substrate is observed in electroreflectance. This study reveals that the valence-band deformation potential does not follow the linear interpolation of those for GaAs and GaN, but shows a rather strong composition dependence with a surprising bowing in a small composition region of the alloy. These results contradict the currently held view that the conduction band is greatly altered but that the valence band is only weakly perturbed by dilute nitrogen doping of GaAs.
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