Abstract
We report the band alignment parameters of ReS2/BN van der Waals heterojunction where the ReS2 and BN monolayer are grown by chemical vapor deposition (CVD). The determination of the band alignment has been carried out by X-ray photoelectron spectroscopy (XPS). With a type-I band alignment, the valence band offset (VBO) and conduction band offset (CBO) values are measured to be 2.79±0.24 eV and 1.76±0.24 eV, respectively. The results can offer a reference for the electric and photoelectric devices based on the ReS2/BN heterojunction. In addition, the large VBO and CBO of this heterojunction make it a good choice for substrates and gate dielectrics of complementary metal oxide semiconductor (CMOS) transistors.
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