Abstract
The valence band offset (VBO) of MgO/TiO 2 (rutile) heterojunction has been directly measured by X-ray photoelectron spectroscopy. The VBO of the heterojunction is determined to be 1.6 ± 0.3 eV and the conduction band offset (CBO) is deduced to be 3.2 ± 0.3 eV, indicating that the heterojunction exhibits a type-I band alignment. These large values are sufficient for MgO to act as tunneling barriers in TiO 2 based devices. The accurate determination of the valence and conduction band offsets is important for use of MgO as a buffer layer in TiO 2 based field-effect transistors and dye-sensitized solar cells.
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