Abstract
The valence band offset in AlAs/GaAs heterojunctions is found to be 0.45±0.05 eV from analysis of charge transfer versus undoped spacer layer thickness. This result and several recent experiments on AlxGa1−xAs/GaAs heterojunctions indicate that the valence band offset is approximately linear in AlAs fraction x over the entire alloy composition range and more than twice the previously accepted value. The relation between heterojunction band offsets and Fermi level pinning for metals on semiconductors is discussed.
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