Abstract
Abstract We describe the spin-dependent electronic dispersion close to the valence band maximum of 2H-, 4H-, and 6H-SiC. Using spin-independent band structure calculations within the density functional theory (DFT) in the local density approximation (LDA) we determine all parameters of the invariant Hamiltonian for the valence bands of the hexagonal polytypes except for the value of the spin-orbit coupling which we take from experimental data. Based on this spin-dependent valence band structure and alternatively on the spin-independent DFT-LDA dispersion we calculate the density of states with the quadratic tetrahedron method and compare it to the density of states related to parabolic valence bands. Finally, we calculate the carrier density for different acceptor levels and acceptor densities and determine their temperature dependence.
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