Abstract
We report on the determination of band offsets in magnetron-sputtered LaAlO3/InGaZnO4 (LAO/IGZO) heterostructures using X-ray Photoelectron Spectroscopy. The valence band offset was determined to be 0.33 eV ± 0.03 eV, while the conduction band offset was determined to be 2.91 ± 0.3 eV. The LaAlO3/InGaZnO4 system has a nested, or straddling, gap (type I) alignment and would provide excellent electron confinement for n-type IGZO thin film transistors.
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