Abstract
CdCl/sub 2/-doped CdS films have been prepared using a vacuum evaporation technique with a goal of providing a low resistivity, large grain size, window layer for CdTe-CdS solar cells. CdS films with 0.05, 0.1 and 0.2% CdCl/sub 2/ doping have been grown. The effects of doping on the optical transmission, XRD, resistivity, carrier concentration, Hall mobility and microstructure have been investigated. N-type CdS films with resistivities of 2 to 10 /spl Omega/cm and Hall mobilities from 1 to 5 cm/sup 2//V-sec have been grown using this technique. The XRD patterns show that is the preferred orientation. SEM analyses reveal that the grains in the films are columnar and their size increases from 70 nm for undoped CdS films to 150 nm for 0.2% CdCl/sub 2/-doped films.
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