Abstract
We propose to utilize the field-emission (FE) effect on a novel micro-machined device to modulate the incoming radio-frequency signal for RF-MEMS ( radio- frequency micro- electro- mechanical system) applications. In this paper, we present some preliminary results such as pressure and temperature dependencies of the FE current. We also notice that by annealing the device inside the vacuum chamber at 200 °C for 20 min, large FE current (85 nA) at low voltage (3 V) can be produced. The leakage current was reduced by employing a silicon-on-insulator (SOI) wafer with thicker buried-oxide layer. Fabrication procedures and experimental results will be discussed.
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