Abstract
The manufacturing of CuInSe2 (CIS) thin films by selenization of Cu–In alloy precursors in a graphite container is described. The copper–indium alloy was formed by magnetron sputtering of Cu/In multilayers. By sequential deposition of Cu and In the 20 alternate layers structure with total thickness varying from 250 to 500nm was obtained. The Cu/In ratio was altered by adjusting the layer deposition time. The phases obtained by X-ray diffraction (XRD) for metallic precursor films were identified as Cu2In, CuIn, Cu11In9 or CuIn2. To produce CuInSe2 the alloys were annealed with elemental selenium in temperature range between 400°C and 500°C by adopting the two-step temperature profile. The selenized films were characterized using XRD to identify the phases and scanning electron microscopy to observe the surface morphology. The parameters of chalcogenization process, mainly heating temperature, time and Se pressure, influence significantly the properties of obtained CIS films.
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