Vacuum Microelectronic Processors for Optical Applications

Abstract

Summary form only given. Energy exchange in a micron-scale zone between a light beam and a free electron beam (EB) can be regulated by control of the EB direction. A 1 V-biased electron deflector may produce light intensity modulation at a rate up to 10% of light frequency. The EB shape, density, and position in effect determine the refractive properties in the exchange zone. High-speed switching, routing and phase modulation can be realized by appropriate variation in the EB parameters. An all-optical switch should be feasible in a vacuum microdevice. AccelBeam and Dartmouth College are collaborating to test these concepts. Initially, the transformations of light with wavelength of order 10 micron are studied. Next step is an operation in typical IR communication band. The ultimate goal is a vacuum microelectronic processor with rate 1 Tpbs. This development is possible due to recent progress in nano-fabrication of high current density cathodes. Fields of promising applications include optical data processing (coding/encryption, data flow separation, switching, routing, etc), broadband communication (amplitude, phase and pulse modulation), remote sensing (including T-ray imaging) and wide angle electronic steering of lidar beam