Abstract
Efficient transparent quantum-dot light emitting diodes (QD-LEDs) are demonstrated by using a silver nanowire (AgNW) cathode. The devices are fabricated through a solution technique, not any vacuum processes are involved. Almost identical performance is obtained for both sides of the transparent device, which is primary due to the high transmittance of AgNW cathode. The maximum luminance (efficiency) for ITO and AgNW side is 25,040 cd/m2 (5.6 cd/A) and 23,440 cd/m2 (5.2 cd/A), respectively. The average specular transmittance of the device (involving the glass substrate) is over 60% in the visible range. This study indicates that AgNW electrodes can serve as a cost-effective, flexible alternative to ITO, and thereby improve the economic viability and mechanical stability of QD-LEDs. All the results suggest that this is an important progress toward producing transparent QD-LEDs based displays and lighting sources.
Highlights
Network film, has been explored for photoelectric applications[21,22,23,24,25] where low sheet resistance (Rs) and high optical transparency (T) in the visible and infrared spectral range are required
It is worth noting that the area of AgNW film influence the resistance measurement results
It is well known that the area of AgNW film dramatically influences the resistance measurement results with a four-probe method
Summary
Network film, has been explored for photoelectric applications[21,22,23,24,25] where low sheet resistance (Rs) and high optical transparency (T) in the visible and infrared spectral range are required. AgNW film are fairly stable and can be prepared with excellent control regarding wire geometry, including nanowire length and diameter[26]. It has been reported that AgNW film with highly average transmittance of 85% and low Rs of 10 Ω sq−1can be achieved using a simple drop casting technique[27]. We can anticipate that AgNW film should be a suitable alternative electrode in vacuum-free QD-LEDs. In this study, we fabricated transparent QD-LEDs through all-solution techniques and not any vacuum processes were involved. The charge carriers are injected into the QD-LEDs through an ITO anode and an AgNW cathode. The device performances, including luminance, efficiency and electroluminescence (EL) spectra, are nearly identical for both sides of the transparent QD-LEDs. The maximum luminance (efficiency) for ITO and AgNWs side is 25,040 cd/m2 (5.6 cd/A) and 23,440 cd/m2 (5.2 cd/A), respectively. These results lay the foundation for rational design of QD-LED structure and offer a practicable platform for the realization of transparent QD-based displays and lightings
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