Abstract

In this work, reduced graphene oxide (rGO) was synthesized using a modified Hummer method and its morphological and structural properties were investigated using transmission electron microscopy (TEM), high-resolution TEM (HR-TEM) and X-ray diffraction (XRD). The rGO was used as the hole transport buffer layer (HTBL) and poly(ethylene oxide) (PEO) was used as the electron transport buffer layer (ETBL) for the vacuum-free quantum dot planar hybrid (VFQPH) solar cells (SCs) fabrication. PbS quantum dots (Qdots) were prepared using a hot-injection method, which was used as the p-type material and PCBM ([6,6]-Phenyl-C61-butyric acid methyl ester) was used as the n-type material. The effects of the hole transport buffer layer and electron transport buffer layer on the morphological and electrical properties of the device were investigated. A device with a structure of glass/indium tin oxide (ITO)/HTBL/PbS: PCBM/ETBL/E-GaIn was fabricated and the maximum power conversion efficiency of about 4.34% was obtained.

Highlights

  • IntroductionColloidal quantum dots (QDs) have generated great interest in the past decade for applications in electronic devices because of their tunable band-gap energy structures and their multiple exciton generation properties

  • Quantum dot (QD) solar cells have been extensively investigated owing to their many advantages compared with organic solar cells, such as cheap, abundant materials and low-cost processability [1,2,3]

  • PbS nanoparticles could be synthesized by facile solution process, which makes them a promising candidate for many applications in an electronic device, including solar cells [6,7,8]

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Summary

Introduction

Colloidal quantum dots (QDs) have generated great interest in the past decade for applications in electronic devices because of their tunable band-gap energy structures and their multiple exciton generation properties. Lead sulfide (PbS) QD nanoparticle is a semiconductor with a band-gap energy ranging from about 1.1 to 1.3 eV; it is earth-abundant, has a high absorption coefficient and a strong quantum confinement property [4,5]. PbS nanoparticles could be synthesized by facile solution process, which makes them a promising candidate for many applications in an electronic device, including solar cells [6,7,8]. There are many research groups that have investigated PbS quantum dot solar cells, such as simple Schottky junction, bulk heterojunction, tandem structure, etc. Improving the contact between the active layer and electrode, decreasing sheet resistance and controlling the active layer surface morphology are the most important factors to enhance device performance

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