Vacuum evaporation system for depositing thick polycrystalline silicon

Abstract

Thick polysilicon (>1 mm) deposition on heated SiO2-coated silicon substrates at high deposition rate (≥4 μm/min) at temperatures to 1100 °C was achieved by vacuum evaporation of silicon using two high power e guns. The deposition system was able to accommodate ten 75 mm diam substrates or eight 100 mm diam substrates. The system was designed as an alternative to the CVD process for depositing polysilicon material for dielectrically isolated integrated circuit substrates. This paper describes the system design and its capabilities.