Abstract
Data are presented about the influence of deposition rate and oxygen pressure during evaporation of SiO and the effect of a heat treatment after deposition on the properties of thin-film capacitors with a dielectric of vacuum deposited silicon oxide and aluminium electrodes. The breakdown phenomenon is discussed and a simple equipment is described to detect self-healing breakdowns during life tests. It was found that the heat treatment can increase the number of electrical weak spots. The weak spots can be removed from the capacitor by a healing procedure. Capacitors that were annealed and healed were stable and did not show further breakdowns.
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