Abstract
The growth of GaAs, GaAsP and GaASSb epitaxial layers made by vacuum chemical epitaxy (VCE) for monolithic two-color terrestrial solar cells is described. The utilization of materials and safety aspects are also discussed. We show the changes made in our VCE reactor to improve film quality and safety. Data are presented on the use of trimethylgallium as a p-type dopant source in solar cells with 90% quantum yields. We discuss the measurement of minority carrier diffusion lengths of over 2 μm in carbon-doped cells using a new technique which we have developed and called sequentially etched quantum yield. The characterization of defects using Schottky barrier electron-beam-induced currents of GaAsP grown on graded transition layers on GaAs substrates is also discussed.
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