Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams

Abstract

High-quality InN layers grown on sapphire substrates by plasma-assisted molecular-beam epitaxy were characterized using monoenergetic positron beams. The carrier concentrations of the films were controlled by Si doping (2.1×1018to1.4×1019cm−3), and the highest obtained Hall mobility was 1300cm2V−1s−1. The Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons were measured as a function of the incident positron energy for undoped and Si-doped InN films. The line-shape parameter S increased with increasing carrier concentration, suggesting the introduction of vacancy-type defects by a Fermi-level effect. The major defect species were varied with carrier concentration, and its species were identified as In vacancies (VIn) or their related defects.