Abstract
Thin BaTiO3 films grown on SrTiO3 substrates were characterized by means of positron annihilation. The films were deposited by molecular-beam epitaxy without using oxygen source. We measured the Doppler broadening spectra of annihilation radiation and x-ray diffraction of the films and found that vacancy-type defects such as oxygen vacancies and other related defects caused lattice relaxation in the films. These defects disappeared after the films were annealed at 600 °C in an O2 atmosphere. Lattice relaxation in the films was also observed when the films were annealed at 1050 °C, but there was no direct relationship between the lattice relaxation that occurred at this temperature and vacancy-type defects. Vacancy-type defects were introduced into the SrTiO3 substrates by the growth of the BaTiO3 films. The species of these defects were identified as oxygen vacancies or defects related to oxygen vacancies, and they appeared as a result of diffusion of oxygen toward the BaTiO3 films. Almost all oxygen vacancies in the SrTiO3 substrates were annealed out at 500 °C.
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