Abstract
Bombardment of GaAs(110) at 300\ensuremath{\le}T\ensuremath{\le}775 K with ${\mathrm{Ar}}^{+}$ ions at normal incidence creates surface-layer defects that generally span one or two unit cells, as shown by scanning tunneling microscopy. Vacancies produced in this way diffuse via thermal activation to form single-layer vacancy islands. The diffusion of divacancies favors [11\ifmmode\bar\else\textasciimacron\fi{}0] and accommodation at islands produces roughly isotropic islands. Modeling of growth showed an overall Arrhenius behavior for diffusion with an activation energy of 1.3\ifmmode\pm\else\textpm\fi{}0.2 eV. Investigations of the surface morphology during multilayer erosion revealed deviation from layer-by-layer removal with scaling exponents between 0.4 and 0.5 for 626\ensuremath{\le}T\ensuremath{\le}775 K.
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