Abstract
The physical origin of bulk related features observed by angle-resolved photoelectron spectroscopy for an ordered 2ML √3 × √3R30 ° ErSi 1.7 silicide on Si(111) has been investigated by means of band structure calculations. The photoemission data are well explained with the defected Er silicide model, i.e. the prominent peaks related to bulk states are consistent with the presence of a defected Si graphite-like plane. More specifically, the calculations clearly predict a nearly flat non-bonding π band near the Fermi level that is observed experimentally and directly reflects the ordered √3 array of Si vacancies.
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