Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism

Abstract

Abstract—The vacancy growth of a faceted pore in a crystal via Chernov mechanism is studied. It is assumed that the growth is due to the diffusion of excess vacancies arising in the bulk of the crystal under the influence of mechanical tensile stress. In the framework of the formalism proposed by Chernov, the distribution of vacancies in the crystal near the step and its rate of advance are found. A connection is established between the normal pore growth rate and the applied mechanical stress. The growth due to the advance of a set of equidistant “void” steps as well as due to advance of the spiral step that arose at the exit point of the screw dislocation are considered. The results can be used to analyze the durability of materials subjected constantly to low tensile stresss.